Vertical Geometry, 2-A Forward Current Ga 2 O 3 Schottky Rectifiers on Bulk Ga 2 O 3 Substrates
Sign Up to like & getrecommendations! Published in 2018 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2018.2838439
Abstract: Large area (up to 0.2 cm2) Ga2O3 rectifiers without edge termination were fabricated on a Si-doped n-Ga2O3 drift layer grown by halide vapor phase epitaxy on a Sn-doped n+Ga2O3 (001) substrate. A forward current of… read more here.
Keywords: temperature; geometry; forward current; vertical geometry ... See more keywords
Design and implementation of floating field ring edge termination on vertical geometry β-Ga2O3 rectifiers
Sign Up to like & getrecommendations! Published in 2020 at "Journal of Vacuum Science and Technology"
DOI: 10.1116/6.0000693
Abstract: One of the key areas for implementation of high-power Ga2O3 rectifiers is the mitigation of electric field crowding at the edge of the depletion region to avoid premature breakdown. Floating metal field rings (FMRs) are… read more here.
Keywords: field; ga2o3 rectifiers; edge; geometry ... See more keywords