Vertical Hole Transport and Carrier Localization in InAs /InAs 1 -x Sb x Type-II Superlattice Heterojunction Bipolar Transistors
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DOI: 10.1103/physrevapplied.7.024016
Abstract: Heterojunction bipolar transistors are used to measure vertical hole transport in narrow-band-gap InAs=InAs1−xSbx type-II superlattices (T2SLs). Vertical hole mobilities (μh) are reported and found to decrease rapidly from 360 cm=Vs at 120 K to approximately… read more here.
Keywords: hole transport; energy; transport; inas ... See more keywords