Vertical leakage mechanism in GaN on Si high electron mobility transistor buffer layers
Sign Up to like & getrecommendations! Published in 2018 at "Journal of Applied Physics"
DOI: 10.1063/1.5027680
Abstract: Control of leakage currents in the buffer layers of GaN based transistors on Si substrates is vital for the demonstration of high performance devices. Here, we show that the growth conditions during the metal organic… read more here.
Keywords: vertical leakage; buffer layers; microscopy; leakage ... See more keywords
Buffer Vertical Leakage Mechanism and Reliability of 200-mm GaN-on-SOI
Sign Up to like & getrecommendations! Published in 2019 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2018.2878457
Abstract: A comprehensive study on buffer vertical leakage mechanism and buffer reliability of 200-mm GaN-on-SOI is conducted in this paper. The buffer vertical leakage current versus bias is found to sequentially comprise three ranges of low-field… read more here.
Keywords: 200 gan; leakage; gan soi; vertical leakage ... See more keywords
Vertical Leakage in GaN-on-Si Stacks Investigated by a Buffer Decomposition Experiment
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DOI: 10.3390/mi11010101
Abstract: We investigated the origin of vertical leakage and breakdown in GaN-on-Si epitaxial structures. In order to understand the role of the nucleation layer, AlGaN buffer, and C-doped GaN, we designed a sequential growth experiment. Specifically,… read more here.
Keywords: algan aln; vertical leakage; leakage; gan algan ... See more keywords