Oxide regrowth mechanism during silicon nitride etching in vertical 3D NAND structures
Sign Up to like & getrecommendations! Published in 2020 at "Microelectronic Engineering"
DOI: 10.1016/j.mee.2019.111191
Abstract: Abstract It is essential to selectively etch Si3N4 in the presence of SiO2 during the process of fabricating vertical 3D NAND structures. SiO2 etching inhibitors can be added to H3PO4 to increase Si3N4-to-SiO2 etch selectivity;… read more here.
Keywords: vertical nand; regrowth; sio2 etch; nand structures ... See more keywords
Azimuthal Charge Redistribution of Hemi-Cylindrical Vertical NAND Flash Memory
Sign Up to like & getrecommendations! Published in 2023 at "IEEE Electron Device Letters"
DOI: 10.1109/led.2023.3265986
Abstract: The reliability issues of the hemi-cylindrical (HC) vertical NAND (VNAND) flash memory are investigated with various channel hole remaining ratios (CHRRs). Unlike conventional VNAND cells, carriers are nonuniformly injected to the charge-trapping layer in the… read more here.
Keywords: redistribution; flash memory; charge; vertical nand ... See more keywords