Low voltage operation of GaN vertical nanowire MOSFET
Sign Up to like & getrecommendations! Published in 2018 at "Solid-state Electronics"
DOI: 10.1016/j.sse.2018.03.001
Abstract: Abstract GaN gate-all-around (GAA) vertical nanowire MOSFET (VNWMOSFET) with channel length of 300 nm and diameter of 120 nm, the narrowest GaN-based vertical nanowire transistor ever achieved from the top-down approach, was fabricated by utilizing anisotropic side-wall… read more here.
Keywords: voltage; low voltage; vnwmosfet; nanowire mosfet ... See more keywords
Long-term Intracellular Recording of Optogenetically-induced Electrical Activities using Vertical Nanowire Multi Electrode Array
Sign Up to like & getrecommendations! Published in 2020 at "Scientific Reports"
DOI: 10.1038/s41598-020-61325-3
Abstract: Continuous recording of intracellular activities in single cells is required for deciphering rare, dynamic and heterogeneous cell responses, which are missed by population or brief single-cell recording. Even if the field of intracellular recording is… read more here.
Keywords: cell; long term; term intracellular; intracellular recording ... See more keywords
Core-shell homojunction silicon vertical nanowire tunneling field-effect transistors
Sign Up to like & getrecommendations! Published in 2017 at "Scientific Reports"
DOI: 10.1038/srep41142
Abstract: We propose three-terminal core-shell (CS) silicon vertical nanowire tunneling field-effect transistors (TFETs), which can be fabricated by conventional CMOS technology. CS TFETs show lower subthreshold swing (SS) and higher on-state current than conventional TFETs through… read more here.
Keywords: silicon vertical; core shell; nanowire; tunneling field ... See more keywords
Nanofabrication of normally-off GaN vertical nanowire MESFETs.
Sign Up to like & getrecommendations! Published in 2019 at "Nanotechnology"
DOI: 10.1088/1361-6528/ab13d0
Abstract: Gallium nitride (GaN) all-around (wrap) gate vertical nanowire (V-NW) field-effect transistors (FETs) are favorable for enhanced electrostatic control of the gate and selectivity for normally on/off operation. In this work, GaN V-NW FETs with a… read more here.
Keywords: normally gan; nanofabrication normally; gan vertical; nanowire ... See more keywords