3-D multilayer monolithic integration of vertical-oriented double-heterojunction GaAs based pHEMT and thermal influence on device parameters
Sign Up to like & getrecommendations! Published in 2017 at "Solid-state Electronics"
DOI: 10.1016/j.sse.2017.03.001
Abstract: Abstract This study focuses on 3-D multilayer monolithic integration of vertical-oriented double-heterojunction AlGaAs/InGaAs/GaAs based pseudomorphic high electron mobility transistors. The effects of the presence of 3-D components above the active layer were accomplished by comparing… read more here.
Keywords: state; multilayer monolithic; monolithic integration; vertical oriented ... See more keywords
Performance improvement of UVA MQWs by vertical oriented nanoporous GaN underlayer.
Sign Up to like & getrecommendations! Published in 2020 at "Nanotechnology"
DOI: 10.1088/1361-6528/aba6b0
Abstract: Well-aligned lateral oriented and vertical oriented nanoporous GaN were fabricated by electrochemical etching procedure, and its influence on the optical characteristics of ultraviolet-A multiple quantum well structure was investigated. We used a multiple quantum well… read more here.
Keywords: oriented nanoporous; multiple quantum; well structure; vertical oriented ... See more keywords