Incorporation of hafnium and platinum metal in vertical power MOSFETs
Sign Up to like & getrecommendations! Published in 2018 at "Journal of Computational Electronics"
DOI: 10.1007/s10825-018-1193-x
Abstract: A novel, vertical single-diffused metal–oxide–semiconductor (VSDMOS) structure is proposed by applying workfunction engineering to a vertical power metal–oxide–semiconductor field-effect transistor (MOSFET) with source and drain regions formed using the charge plasma concept. Electron and hole… read more here.
Keywords: metal; hafnium platinum; vertical power; platinum metal ... See more keywords
The Tri-Gate MOSFET: A New Vertical Power Transistor in 4H-SiC
Sign Up to like & getrecommendations! Published in 2020 at "IEEE Electron Device Letters"
DOI: 10.1109/led.2020.3040239
Abstract: The tri-gate MOSFET is a vertical power transistor with multiple sub-micron FinFET channels. The FinFET structure increases the current-carrying width of the MOS inversion layer without increasing the device area, thereby reducing the specific channel… read more here.
Keywords: vertical power; tri gate; gate mosfet; power ... See more keywords