Reproducible NiO/Ga2O3 Vertical Rectifiers with Breakdown Voltage >8 kV
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DOI: 10.3390/cryst13060886
Abstract: Optimized vertical heterojunction rectifiers with a diameter of 100 µm, consisting of sputter-deposited p-type NiO forming a p–n junction with thick (10 µm) Ga2O3 drift layers grown by halide vapor phase epitaxy (HVPE) on (001)… read more here.
Keywords: vertical rectifiers; nio ga2o3; reproducible nio; ga2o3 vertical ... See more keywords