Continuous semianalytical modeling of vertical surrounding-gate tunnel FET: analog/RF performance evaluation
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DOI: 10.1007/s10825-018-1141-9
Abstract: A continuous and accurate model based on the two-dimensional (2D) potential solution of a tunnel field-effect transistor (TFET) with undoped vertical surrounding-gate (VSG) structure is proposed. Both ambipolarity and dual modulation effects are included to… read more here.
Keywords: surrounding gate; continuous semianalytical; vertical surrounding; tunnel ... See more keywords