Relation between Ga Vacancies, Photoluminescence, and Growth Conditions of MOVPE-Prepared GaN Layers
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DOI: 10.3390/ma15196916
Abstract: A set of GaN layers prepared by metalorganic vapor phase epitaxy under different technological conditions (growth temperature carrier gas type and Ga precursor) were investigated using variable energy positron annihilation spectroscopy (VEPAS) to find a… read more here.
Keywords: growth; vga concentration; gan layers; formation ... See more keywords