Strain relaxation of InGaN/GaN multi-quantum well light emitters via nanopatterning.
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DOI: 10.1364/oe.27.030081
Abstract: Strain in InGaN/GaN multiple-quantum well (MQW) light emitters was relaxed via nanopatterning using colloidal lithography and top-down plasma etching. Colloidal lithography was performed using Langmuir-Blodgett dip-coating of samples with silica particles (d = 170, 310, 690, 960… read more here.
Keywords: relaxation; ingan gan; light emitters; strain relaxation ... See more keywords