Modeling of Via Resistance for Advanced Technology Nodes
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DOI: 10.1109/ted.2017.2687524
Abstract: We investigate the dependence of Cu via resistance on via dimensions, shape, misalignment, and Co via prefill level by means of a novel resistivity model, calibrated to actual wires on silicon and integrated into the… read more here.
Keywords: self aligned; technology nodes; wire; via resistance ... See more keywords