Performance Improvement of GaN-Based Violet Laser Diodes
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DOI: 10.1088/0256-307x/34/1/017101
Abstract: The influences of InGaN/GaN multiple quantum wells (MQWs) and AlGaN electron-blocking layers (EBL) on the performance of GaN-based violet laser diodes are investigated. Compared with the InGaN/GaN MQWs grown at two different temperatures, the same-temperature… read more here.
Keywords: laser; gan based; laser diodes; violet laser ... See more keywords