Anomalous DC and RF behavior of virgin AlGaN/AlN/GaN HEMTs
Sign Up to like & getrecommendations! Published in 2017 at "Semiconductor Science and Technology"
DOI: 10.1088/1361-6641/aa5473
Abstract: The performance of gallium nitride transistors is still limited by technological problems often related to defects and traps. In this work, virgin AlGaN/AlN/GaN HEMTs exhibiting an anomalous DC behavior accompanied by frequency dispersion in the… read more here.
Keywords: algan aln; anomalous behavior; aln gan; gan hemts ... See more keywords