High gain and high ultraviolet/visible rejection ratio photodetectors using p-GaN/AlGaN/GaN heterostructures grown on Si
Sign Up to like & getrecommendations! Published in 2020 at "Applied Physics Letters"
DOI: 10.1063/5.0011685
Abstract: We report high performance ultraviolet (UV) photodetectors (PDs) based on p-GaN-gated AlGaN/GaN heterostructures grown on silicon substrates. Benefitting from the high electrical gain resulting from the transistor-like operation of the device, a photocurrent as high… read more here.
Keywords: rejection ratio; heterostructures grown; algan gan; ratio ... See more keywords