Low voltage operation of GaN vertical nanowire MOSFET
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DOI: 10.1016/j.sse.2018.03.001
Abstract: Abstract GaN gate-all-around (GAA) vertical nanowire MOSFET (VNWMOSFET) with channel length of 300 nm and diameter of 120 nm, the narrowest GaN-based vertical nanowire transistor ever achieved from the top-down approach, was fabricated by utilizing anisotropic side-wall… read more here.
Keywords: voltage; low voltage; vnwmosfet; nanowire mosfet ... See more keywords