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Published in 2025 at "IEEE Journal of the Electron Devices Society"
DOI: 10.1109/jeds.2024.3495033
Abstract: Self-heating effect (SHE) in void embedded SOI (VESOI) MOSFET is analyzed using 3D finite-element method (FEM) to solve modified Fourier heat conduction equations. The induced void beneath the silicon channel results in a 42% increase…
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Keywords:
self heating;
embedded soi;
effect void;
void embedded ... See more keywords
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Published in 2025 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2024.3506504
Abstract: The excellent tolerance against total ionizing dose (TID) effect and high compatibility with conventional technology nodes has been demonstrated in our previous work with void-embedded-silicon-on-insulator (VESOI) device. However, the presence of embedded void structures within…
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Keywords:
void embedded;
ionizing dose;
embedded silicon;
performance ... See more keywords