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Published in 2019 at "Journal of Physical Chemistry C"
DOI: 10.1021/acs.jpcc.9b06104
Abstract: The thermal atomic layer etching (ALE) of Al2O3 can be achieved using sequential fluorination and ligand-exchange reactions. Although previous investigations have characterized the etch rates and surface chemistry, no reports have identified the volatile etch…
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Keywords:
etch species;
atomic layer;
chemistry;
etch ... See more keywords