Calibrated Nanoscale Dopant Profiling and Capacitance of a High-Voltage Lateral MOS Transistor at 20 GHz Using Scanning Microwave Microscopy
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DOI: 10.1109/tnano.2017.2657888
Abstract: We quantitatively image the doping concentration and the capacitance of a high-voltage lateral metal-oxide-semiconductor transistor device with a channel length of 0.5 μm at 20-GHz frequency using scanning microwave microscopy (SMM). The transistor is embedded… read more here.
Keywords: high voltage; voltage lateral; microscopy; capacitance high ... See more keywords