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Published in 2019 at "IETE Journal of Research"
DOI: 10.1080/03772063.2019.1620646
Abstract: To support the current level of integration beyond 22 nm, the FinFET architecture is introduced with the expectation of greater levels of device matching. An additional mechanism, arising from char...
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Keywords:
angle variation;
voltage model;
threshold voltage;
variation oriented ... See more keywords
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Published in 2019 at "IEEE Access"
DOI: 10.1109/access.2019.2937545
Abstract: In this paper, a threshold voltage model for charge trapping effect of AlGaN/GaN HEMTs is proposed. The quiescent bias stresses are considered for well modeling the current collapse critical points in pulsed I-V curves. Moreover,…
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Keywords:
threshold voltage;
trapping effect;
model;
voltage model ... See more keywords
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Published in 2017 at "IEEE Electron Device Letters"
DOI: 10.1109/led.2017.2679102
Abstract: In this letter, a semi-analytical current–voltage model for a negative capacitance field-effect transistor (NCFET) with a ferroelectric material (i.e., BaTiO3) is proposed. Surface potential ( $\psi _{\mathrm {S}})$ in the channel region is determined first…
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Keywords:
voltage;
voltage model;
negative capacitance;
model negative ... See more keywords