On the threshold voltage of normally-OFF AlGaN/GaN heterostructure field effect transistors (HFETs) with p-(Al)GaN gate
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DOI: 10.1088/1361-6641/ab5607
Abstract: A physics-based analytical method has been developed to correctly estimate the threshold voltage of normally-OFF AlGaN/GaN heterostructure field effect transistors (HFETs) with p-(Al)GaN gate. This analysis considers the effect of all polarization charges at different… read more here.
Keywords: voltage; voltage normally; threshold voltage; effect ... See more keywords