Decipher Turn-On Voltage Plateau of High-Voltage Integrated Gate Commutated Thyristors
Sign Up to like & getrecommendations! Published in 2025 at "IEEE Transactions on Power Electronics"
DOI: 10.1109/tpel.2024.3514459
Abstract: The high-voltage integrated gate commutated thyristor (IGCT, reverse-blocking type) is a suitable device for hybrid line-commutated converters to resist commutation failures. During the turn-on process, a voltage plateau is observed under a high the current… read more here.
Keywords: voltage integrated; gate commutated; voltage; voltage plateau ... See more keywords