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Published in 2019 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2018.2882016
Abstract: A new concept high-voltage pseudo-p-channel lateral double-diffused MOS (p-LDMOS) with multiple current paths for conduction is proposed and investigated in this paper. The proposed power device consists of two hole current paths (p-channel MOS device)…
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Keywords:
high voltage;
voltage pseudo;
ldmos device;
device ... See more keywords