ASM GaN: Industry Standard Model for GaN RF and Power Devices—Part-II: Modeling of Charge Trapping
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DOI: 10.1109/ted.2018.2868261
Abstract: Because of charge trapping in GaN HEMTs, dc characteristics of these devices are not representative of high-frequency operation. The advanced spice model GaN model presented in Part I of this paper is combined with a… read more here.
Keywords: part; model gan; model; voltage ranging ... See more keywords