Effects of volumetric and potential energy change on indirect to direct bandgap transition of Ge/Sn alloy
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DOI: 10.1063/1.5048777
Abstract: The germanium-tin (Ge-Sn) alloy has been considered a candidate for applications in Short Wave Infrared optical electronics, because it has the property of transforming pure germanium (Ge), typically an indirect bandgap material, into a direct… read more here.
Keywords: bandgap; potential energy; alloy; effects volumetric ... See more keywords