Reliability Characterization of Gallium Nitride MIS-HEMT Based Cascode Devices for Power Electronic Applications
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DOI: 10.3390/en13102628
Abstract: We present a detailed study of dynamic switching instability and static reliability of a Gallium Nitride (GaN) Metal-Insulator-Semiconductor High-Electron-Mobility-Transistor (MIS-HEMT) based cascode switch under off-state (negative bias) Gate bias stress (VGS, OFF). We have investigated… read more here.
Keywords: state; degradation; cascode; vth shift ... See more keywords