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Published in 2022 at "ACS nano"
DOI: 10.1021/acsnano.1c10524
Abstract: Inverting a semiconducting channel is the basis of all field-effect transistors. In silicon-based metal-oxide-semiconductor field-effect transistors (MOSFETs), a gate dielectric mediates this inversion. Access to inversion layers may be granted by interfacing ultrathin low-dimensional semiconductors…
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Keywords:
field effect;
dimensional van;
van der;
waals heterojunction ... See more keywords