Low-Temperature Fabrication of Wafer-Bonded Ge/Si p-i-n Photodiodes by Layer Exfoliation and Nanosecond-Pulse Laser Annealing
Sign Up to like & getrecommendations! Published in 2019 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2019.2893273
Abstract: We report a potential method for the fabrication of Si-based Ge film with low threading dislocation (TD) density ( read more here.
Keywords: fabrication; wafer bonded; temperature; layer exfoliation ... See more keywords
Effect of the bonding layer and multigrading layers on the performance of a wafer-bonded InGaAs/Si single-photon detector.
Sign Up to like & getrecommendations! Published in 2023 at "Applied optics"
DOI: 10.1364/ao.482982
Abstract: A wafer-bonded InGaAs/Si avalanche photodiode (APD) at a wavelength of 1550 nm was theoretically simulated. We focused on the effect of the I n 1-x G a x A s multigrading layers and bonding layers on… read more here.
Keywords: wafer bonded; bonding layer; multigrading layers; bonded ingaas ... See more keywords