Investigations of silicon wafer bonding utilizing sputtered Al and Sn films
Sign Up to like & getrecommendations! Published in 2017 at "Microsystem Technologies"
DOI: 10.1007/s00542-016-2982-4
Abstract: Nowadays, wafer bonding is becoming a key enabling technology for three-dimensional (3D) packaging, micro-electro-mechanical systems (MEMS) encapsulation and heterogeneous integration. This paper develops and investigates entire Si wafer bonding based on thin Al and Sn… read more here.
Keywords: silicon wafer; bonding utilizing; investigations silicon; wafer bonding ... See more keywords
Temperature-dependent interface characteristic of silicon wafer bonding based on an amorphous germanium layer deposited by DC-magnetron sputtering
Sign Up to like & getrecommendations! Published in 2018 at "Applied Surface Science"
DOI: 10.1016/j.apsusc.2017.10.150
Abstract: Abstract We report a near-bubble-free low-temperature silicon (Si) wafer bonding with a thin amorphous Ge (a-Ge) intermediate layer. The DC-magnetron-sputtered a-Ge film on Si is demonstrated to be extremely flat (RMS = 0.28 nm) and hydrophilic (contact angle = 3°).… read more here.
Keywords: temperature; silicon wafer; layer; wafer bonding ... See more keywords
A review of silicon-based wafer bonding processes, an approach to realize the monolithic integration of Si-CMOS and III–V-on-Si wafers
Sign Up to like & getrecommendations! Published in 2021 at "Journal of Semiconductors"
DOI: 10.1088/1674-4926/42/2/023106
Abstract: The heterogeneous integration of III–V devices with Si-CMOS on a common Si platform has shown great promise in the new generations of electrical and optical systems for novel applications, such as HEMT or LED with… read more here.
Keywords: iii; integration; review silicon; wafer bonding ... See more keywords
Practical CMUT Fabrication With a Nitride-to-Oxide-Based Wafer Bonding Process
Sign Up to like & getrecommendations! Published in 2017 at "Journal of Microelectromechanical Systems"
DOI: 10.1109/jmems.2017.2675987
Abstract: The introduction of wafer-bonding technique to capacitive micromachined ultrasonic transducer (CMUT) fabrication offered advantages over the surface micromachining technique, such as simplified fabrication, better membrane uniformity, and increased active area. The conventional wafer-bonding CMUT process… read more here.
Keywords: wafer bonding; cmut fabrication; fabrication; bonding process ... See more keywords
Wafer Bonding of SiC-AlN at Room Temperature for All-SiC Capacitive Pressure Sensor
Sign Up to like & getrecommendations! Published in 2019 at "Micromachines"
DOI: 10.3390/mi10100635
Abstract: Wafer bonding of a silicon carbide (SiC) diaphragm to a patterned SiC substrate coated with aluminum nitride (AlN) film as an insulating layer is a promising choice to fabricate an all-SiC capacitive pressure sensor. To… read more here.
Keywords: sab; sic capacitive; pressure sensor; aln ... See more keywords
Comprehensive Assessments in Bonding Energy of Plasma Assisted Si-SiO2 Direct Wafer Bonding after Low Temperature Rapid Thermal Annealing
Sign Up to like & getrecommendations! Published in 2022 at "Micromachines"
DOI: 10.3390/mi13111856
Abstract: Direct wafer bonding is one of the most attractive techniques for next-generation semiconductor devices, and plasma has been playing an indispensable role in the wider adoption of the wafer bonding technique by lowering its process… read more here.
Keywords: direct wafer; wafer; temperature; wafer bonding ... See more keywords
Investigation of Au/Si Eutectic Wafer Bonding for MEMS Accelerometers
Sign Up to like & getrecommendations! Published in 2017 at "Micromachines"
DOI: 10.3390/mi8050158
Abstract: Au/Si eutectic bonding is considered to BE a promising technology for creating 3D structures and hermetic packaging in micro-electro-mechanical system (MEMS) devices. However, it suffers from the problems of a non-uniform bonding interface and complex… read more here.
Keywords: bonding; eutectic bonding; wafer bonding; mems accelerometer ... See more keywords