Defect Engineering to Achieve Wake‐up Free HfO 2 ‐Based Ferroelectrics
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DOI: 10.1002/adem.202000791
Abstract: Wake-up effect is still an obstacle in the commercialization of hafnia-based ferroelectric thin films. In this work, we investigate the effect of defects, controlled by ozone dosage, on the field cycling behavior of the atomic… read more here.
Keywords: engineering; wake effect; wake free; dosage ... See more keywords