Unveiling the pinning behavior of charged domain walls in BiFeO3 thin films via vacancy defects
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DOI: 10.1016/j.actamat.2019.12.041
Abstract: Abstract Manipulation of electronic states in functional ferroelectrics is promising for next generation electronics devices. The charged domain walls in ferroelectric materials especially facilitate the electronic state modulation and are promising for developing interface-based devices.… read more here.
Keywords: walls bifeo3; vacancy; pinning behavior; domain ... See more keywords