An Epitaxy Transfer Process for Heterogeneous Integration of Submillimeter-Wave GaAs Schottky Diodes on Silicon Using SU-8
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DOI: 10.1109/led.2017.2756920
Abstract: This letter describes a new approach for fabricating quasi-vertical submillimeter-wave GaAs Schottky diodes heterogeneously integrated to high-resistivity silicon substrates. The new method is robust and eliminates previous processing steps that were prone to result in… read more here.
Keywords: schottky diodes; gaas schottky; submillimeter wave; process ... See more keywords