Electrical Gating of the Charge-Density-Wave Phases in Two-Dimensional h-BN/1T-TaS2 Devices.
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DOI: 10.1021/acsnano.2c07876
Abstract: We report on the electrical gating of the charge-density-wave phases and current in h-BN-capped three-terminal 1T-TaS2 heterostructure devices. It is demonstrated that the application of a gate bias can shift the source-drain current-voltage hysteresis associated… read more here.
Keywords: charge density; wave phases; density wave; electrical gating ... See more keywords