High-performance waveguide Ge/Si avalanche photodiode with a lateral separate-absorption-charge-multiplication structure.
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DOI: 10.1364/oe.450618
Abstract: A high-performance waveguide Ge/Si avalanche photodiode operating at the O-band (1310 nm) is designed with a Ge/Si ridge waveguide defined by two shallow trenches in the active region and fabricated with simplified processes. The device… read more here.
Keywords: performance waveguide; waveguide avalanche; high performance; avalanche photodiode ... See more keywords