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Published in 2017 at "Journal of Crystal Growth"
DOI: 10.1016/j.jcrysgro.2017.08.008
Abstract: Abstract Three types of unidentified stacking faults with emission wavelengths of over 500 nm were confirmed in 4H-SiC epitaxial films and characterized using grazing incident X-ray topography, transmission electron microscopy, and high-resolution scanning transmission electron microscopy.…
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Keywords:
sic epitaxial;
microscopy;
stacking faults;
wavelengths 500 ... See more keywords