Articles with "weak localization" as a keyword



Temperature dependence of universal conductance fluctuation due to development of weak localization in graphene

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Published in 2017 at "Solid State Communications"

DOI: 10.1016/j.ssc.2017.09.002

Abstract: Abstract The temperature effect of quantum interference on resistivity is examined in monolayer graphene, with experimental results showing that the amplitude of the conductance fluctuation increases as temperature decreases. We find that this behavior can… read more here.

Keywords: weak localization; dependence; temperature; conductance fluctuation ... See more keywords

Weak localization behavior observed in graphene grown on germanium substrate

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Published in 2018 at "AIP Advances"

DOI: 10.1063/1.5021875

Abstract: Two dimensional electron systems (2DES) usually show the weak localization behavior in consequence of electron interaction in the limited dimension. Distinct from other 2DES, the monolayer graphene, due to the chirality, exhibits unique weak localization… read more here.

Keywords: weak localization; localization; localization behavior; graphene grown ... See more keywords
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Weak localization and dimensional crossover in compositionally graded AlxGa1−xN

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Published in 2021 at "Applied Physics Letters"

DOI: 10.1063/5.0042098

Abstract: The interaction between the itinerant carriers, lattice dynamics, and defects is a problem of long-standing fundamental interest for developing quantum theory of transport. Here, we study this interaction in the compositionally and strain-graded AlGaN heterostructures… read more here.

Keywords: temperature; dimensional crossover; weak localization; localization dimensional ... See more keywords

Electronic transport across the metal–insulator transition in 2D p-Si/SiGe/Si systems: insights from variable range hopping to weak localization

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Published in 2025 at "Phase Transitions"

DOI: 10.1080/01411594.2025.2483878

Abstract: ABSTRACT In this study, we delve into the intricacies of electrical conduction across both sides of the Metal–Insulator Transition (MIT) in a 2D p-Si/SiGe/Si system. Employing numerical techniques, our investigation reveals distinct behaviors on each… read more here.

Keywords: variable range; range hopping; metal insulator; transition ... See more keywords

Tensile strain-induced disorder and weak localization in SrRuO3 thin films on (100) KTaO3 substrates

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Published in 2024 at "Physica Scripta"

DOI: 10.1088/1402-4896/ad8e06

Abstract: SrRuO3 (SRO) thin (∼12 nm) films have been grown on KTaO3 (001) substrates by RF magnetron sputtering. The as-prepared films are under enormous in-plane tensile strain, which corresponds to the elastic energy of ∼1.5 MJ.… read more here.

Keywords: topography; 200 mtorr; thin films; weak localization ... See more keywords

Full spin-orbit coefficient in III-V semiconductor wires based on the anisotropy of weak localization under in-plane magnetic field

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Published in 2021 at "Physical Review B"

DOI: 10.1103/physrevb.103.094412

Abstract: Because of the one-dimensional confinement of electron momentum in narrow semiconductor wires, spin relaxation is suppressed irrespective of the presence of spin-orbit (SO) interaction. In quantum transport, weak localization corrections to conductivity are reflected as… read more here.

Keywords: localization; magnetic field; weak localization; spin orbit ... See more keywords

Weak localization of magnons in a disordered two-dimensional antiferromagnet

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Published in 2018 at "Physical Review B"

DOI: 10.1103/physrevb.97.020407

Abstract: We propose the weak localization of magnons in a disordered two-dimensional antiferromagnet. We derive the longitudinal thermal conductivity $\kappa_{xx}$ for magnons of a disordered Heisenberg antiferromagnet in the linear-response theory with the linear-spin-wave approximation. We… read more here.

Keywords: magnons disordered; weak localization; localization magnons; antiferromagnet ... See more keywords

Weak localization in transition metal dichalcogenide monolayers and their heterostructures with graphene

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Published in 2019 at "Physical Review B"

DOI: 10.1103/physrevb.99.205407

Abstract: We calculate the interference correction to the conductivity of doped transition metal dichalcogenide monolayers (TMDC). Because of the interplay between valley structure and intrinsic spin-orbit coupling (SOC), these materials exhibit a rich weak localization (WL)… read more here.

Keywords: weak localization; transition metal; metal dichalcogenide; dichalcogenide monolayers ... See more keywords