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Published in 2020 at "Advanced Electronic Materials"
DOI: 10.1002/aelm.202000434
Abstract: In this study, highly reliable and accurate weight‐modification behaviors are realized using a W/Al2O3 (3 nm)/HfO2 (7 nm)/TiN memristive device. The accuracy of the simulated inference of the MNIST dataset when considering the weight‐modification behavior…
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Keywords:
hfo2;
linear symmetric;
weight modification;
modification ... See more keywords