Dependency of well-contact density on MCUs in 65-nm bulk CMOS SRAM
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DOI: 10.1007/s11432-017-9549-8
Abstract: Dear editor, In custom static random access memory (SRAM) cell, radiation-induced single bit upsets (SBUs) are considered as the main cause of soft error [1]. Advanced technologies and scaling down of feature sizes have made… read more here.
Keywords: mcu; well contact; density; sram ... See more keywords