Dependence of InGaN Quantum Well Thickness on the Nature of Optical Transitions in LEDs
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DOI: 10.3390/ma15010237
Abstract: The design of the active region is one of the most crucial problems to address in light emitting devices (LEDs) based on III-nitride, due to the spatial separation of carriers by the built-in polarization. Here,… read more here.
Keywords: dependence ingan; ingan quantum; well thickness; optical transitions ... See more keywords