Room-temperature photoluminescence and electroluminescence of 1.3-μm-range BGaInAs quantum wells on GaAs substrates
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DOI: 10.1063/5.0011147
Abstract: We report the room temperature photoluminescence and electroluminescence properties of boron incorporated into highly strained InGaAs, forming BGaInAs, grown on GaAs substrates. X-ray diffraction was used to determine the alloy composition and strain of BGaInAs… read more here.
Keywords: wells gaas; room temperature; electroluminescence; temperature photoluminescence ... See more keywords