Room-temperature photoluminescence and electroluminescence of 1.3-μm-range BGaInAs quantum wells on GaAs substrates
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DOI: 10.1063/5.0011147
Abstract: We report the room temperature photoluminescence and electroluminescence properties of boron incorporated into highly strained InGaAs, forming BGaInAs, grown on GaAs substrates. X-ray diffraction was used to determine the alloy composition and strain of BGaInAs… read more here.
Keywords: wells gaas; room temperature; electroluminescence; temperature photoluminescence ... See more keywords
Improving electron mobility in InAs quantum wells on GaAs by removing bunched surface steps generated in strain relaxation
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DOI: 10.1063/5.0268057
Abstract: The effect of surface smoothing in the heteroepitaxy of InAs quantum wells on GaAs(001) is investigated using transmission electron microscopy. While the stress fields cause the relaxation of the lattice in the growth of the… read more here.
Keywords: electron mobility; wells gaas; mobility; quantum wells ... See more keywords