Indium Incorporation into InGaN Quantum Wells Grown on GaN Narrow Stripes
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DOI: 10.3390/ma12162583
Abstract: InGaN quantum wells were grown using metalorganic chemical vapor phase epitaxy (vertical and horizontal types of reactors) on stripes made on GaN substrate. The stripe width was 5, 10, 20, 50, and 100 µm and… read more here.
Keywords: indium incorporation; ingan quantum; quantum wells; wells grown ... See more keywords