MOCVD Growth of InGaAs/GaAs/AlGaAs Laser Structures with Quantum Wells on Ge/Si Substrates
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DOI: 10.3390/cryst8080311
Abstract: The paper presents the results of the application of MOCVD growth technique for formation of the GaAs/AlAs laser structures with InGaAs quantum wells on Si substrates with a relaxed Ge buffer. The fabricated laser diodes… read more here.
Keywords: mocvd growth; gaas; laser structures; quantum wells ... See more keywords