Wettability of Si and Al–12Si alloy on Pd-implanted 6H–SiC*
Sign Up to like & getrecommendations! Published in 2018 at "Chinese Physics B"
DOI: 10.1088/1674-1056/27/4/046101
Abstract: SiC monocrystal substrates are implanted by Pd ions with different ion-beam energies and fluences, and the effects of Pd ion implantation on wettability of Si/SiC and Al–12Si/SiC systems are investigated by the sessile drop technique.… read more here.
Keywords: 12si alloy; ion implantation; ion; wettability ... See more keywords