3-D Wire Bondless Switching Cell Using Flip-Chip-Bonded Silicon Carbide Power Devices
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DOI: 10.1109/tpel.2017.2782226
Abstract: This paper presents a three-dimensional (3-D) wire bondless power module using silicon carbide (SiC) power devices. Commercially available SiC power devices are designed for wire bonding. Wire bonds have an inherent parasitic inductance that limits… read more here.
Keywords: wire bondless; power devices; wire; power ... See more keywords