In-situ Doped Silicon Thin Films for Passivating Contacts by Hot-Wire Chemical Vapor Deposition with a High Deposition Rate of 42 nm/min.
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DOI: 10.1021/acsami.9b10360
Abstract: Hot-wire chemical vapor deposition (HWCVD) was used to deposit in-situ doped amorphous silicon layers for poly-Si/SiOx passivating contacts at a high deposition rate of 42 nm/min. We investigated the influence of a varied phosphine gas… read more here.
Keywords: chemical vapor; hot wire; vapor deposition; deposition ... See more keywords