Bond Wire Damage Detection Method on Discrete MOSFETs Based on Two-Port Network Measurement
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DOI: 10.3390/mi13071075
Abstract: Bond wire damage is one of the most common failure modes of metal-oxide semiconductor field-effect transistor (MOSFET) power devices in wire-welded packaging. This paper proposes a novel bond wire damage detection approach based on two-port… read more here.
Keywords: network; bond wire; wire damage; wire ... See more keywords