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Published in 2017 at "IEEE Transactions on Very Large Scale Integration (VLSI) Systems"
DOI: 10.1109/tvlsi.2016.2600681
Abstract: Because of the delay of the next-generation lithography technologies, self-aligned double patterning (SADP) has become one of the major lithography solutions for sub-20-nm technology nodes. For advanced sub-10-nm nodes, self-aligned quadruple patterning (SAQP) or even…
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Keywords:
self aligned;
cut mask;
wire planning;