Formation of indium arsenide atomic wires on the In/Si(111)-4 × 1 surface
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DOI: 10.1016/j.spmi.2017.01.016
Abstract: Abstract Density functional theory calculations have been applied to describe the formation of InAs atomic-size wires on the In/Si(111)–4 × 1 surface. Two different coverages, ¼ ML and ½ ML, were considered. We have taken in to… read more here.
Keywords: surface; atomic wires; surface formation; 111 surface ... See more keywords