AlGaN/GaN MSM UV photodetector without and with BGaN back-barrier layer comparison study by SILVACO-TCAD
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DOI: 10.11591/ijeecs.v40.i2.pp590-600
Abstract: Using DevEDIT and atlas under SILVCAO-TCAD, we were able to achieve high photodetector metal-semiconductor-metal (MSM) AlGaN/GaN/BGaN performance with high electronic mobility. Our device demonstrated a sensitivity of 286 (I illumination/I dark) at Vanode 20V with… read more here.
Keywords: photodetector; without bgan; msm; back barrier ... See more keywords