Investigation of GaAs surface treatments for ZnSe growth by molecular beam epitaxy without a buffer layer
Sign Up to like & getrecommendations! Published in 2021 at "Applied Surface Science"
DOI: 10.1016/j.apsusc.2021.149245
Abstract: Abstract Atomically clean and smooth surfaces are critical prerequisites for the epitaxial regrowth of dissimilar semiconductors. Using ZnSe/GaAs as a model system, epitaxial regrowth without a buffer layer after thermal cleaning with various As-fluxes, atomic… read more here.
Keywords: surface; buffer layer; layer; gaas ... See more keywords
Growth and Characterization of InSb Thin Films on GaAs (001) without Any Buffer Layers by MBE
Sign Up to like & getrecommendations! Published in 2017 at "Chinese Physics Letters"
DOI: 10.1088/0256-307x/34/7/076105
Abstract: We report the growth of InSb layers directly on GaAs (001) substrates without any buffer layers by molecular beam epitaxy (MBE). Influences of growth temperature and V/III flux ratios on the crystal quality, the surface… read more here.
Keywords: thin films; buffer layers; insb thin; without buffer ... See more keywords